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Wafer Fabrication :: ion implantation

Ions are accelerated by an electrostatic field and aimed at the wafers so that they are implanted into the silicon. These ions are deliberately introducing impurities that change the electrical properties of the material into which they are implanted. The number of ions implanted and the implantation energy must be carefully controlled in order to produce surface layers with the desired electrical properties.

Working at the urnace controls      
Previous Step :: etching
Next Step :: annealing

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